specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 1 of 5 july 2008 AP502 umts-band 4w hbt amplifier module product information product features ? 2110 ? 2170 mhz ? 30 db gain ? +36 dbm p1db ? -55 dbc aclr @ 25 dbm wcdma linear power ? +12 v single supply ? power down mode ? bias current adjustable ? rohs-compliant flange-mount pkg applications ? final stage amplifiers for repeaters ? optimized for driver amplifier pa mobile infrastructure product description the AP502 is a high dynamic range power amplifier in a rohs-compliant flange-mount package. the multi-stage amplifier module has 30 db gain, while being able to achieve high performance for umts-band applications with +36 dbm of compressed 1db power. the module has been internally optimized for driver applications provide -55 dbc aclr at 25 for wcdma applications. the module can be biased down for current when higher efficiency is required. the AP502 uses a high reliab ility ingap/gaas hbt process technology and does not require any external matching components. the module operates off a +12v supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifie r to maintain high linearity over temperature. it has the added feature of a +5v power down control pin. a low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. all devices are 100% rf and dc tested. the AP502 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. this combination makes the device an excellent candidate for next generation multi-carrier 3g base stations. functional diagram top view pin no. function 1 rf output 2 / 4 vcc 3 / 5 vpd 6 rf input case ground specifications 25 oc, v cc =12v, v pd =5v, i cq =820ma, r7=0 ? , 50 ? unmatched fixture parameter units min typ max operational bandwidth mhz 2110 ? 2170 test frequency mhz 2140 power gain db 28.5 30 34.5 wcdma aclr1 @ 25dbm (1) dbc -55 -50 wcdma aclr2 @ 25dbm (2) -68 -53 input return loss db 11 output return loss db 5.3 output p1db dbm +36 output ip3 dbm +52 operating current @ 25 dbm ma 790 840 940 quiescent current, icq ma 780 820 920 device voltage, vcc v +12 device voltage, vpd (3) v +5 load stability vswr 10:1 1. 3gpp wcdma signal modulation, test mode l 1+32 dpch, 3.84 mhz bw, 5 mhz offset. 2. 3gpp wcdma signal modulation, test mode l 1+32 dpch, 3.84 mhz bw, 10 mhz offset. 3. pull-down voltage: 0v = ?off?, 5v=?on? absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -55 to +150 c rf input power (continuous) with output terminated in 50 ? +15 dbm operation of this device above any of th ese parameters may cause permanent damage. typical performance (4) parameter units config1 config2 operating current @ 25 dbm ma 840 420 quiescent current, icq ma 820 250 device voltage, vcc v +12 +12 r7 value ? 0 730 test frequency mhz 2140 2140 power gain db 30 27.7 wcdma aclr1 @ 25dbm (2) dbc -55 -47.5 input return loss db 11 10 output return loss db 5.3 7 output p1db dbm +36 +36 output ip3 dbm +52 +50 4. configuration 1 has the module biased in cla ss ab and is detailed on page 2 of the datasheet. performance is shown at 25 oc, vcc=12v, vpd=5v, icq=820ma, r7=0 ? , 50 ? unmatched fixture. configuration 2 has the module biased in near class b and is detailed on page 3 of the datasheet. performance is shown at 25 oc, vcc=12v, vpd=5v, icq=250ma, r7=730 ? , 50 ? tuned fixture. ordering information part no. description AP502 umts-band 4w hb t amplifier module AP502-pcb fully-assembled evaluation board (class ab configuration, icq=820ma) 1 2 3 4 5 6
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 2 of 5 july 2008 AP502 umts-band 4w hbt amplifier module product information performance graphs ? class ab configuration (AP502-pcb) the AP502-pcb and AP502 module is configured for class ab by default. the resistor ? r7 ? which sets the current draw for the amplifier is set at 0 ? in this configuration. increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page. notes: 1. please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. the use of a convection fan is also recommended in laboratory environments. details of the mounting holes used in the wj heatsink are given on the last page of this datasheet. 2. the area around the module underneath the pcb should not contain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the laboratory, the power-on sequencing should be followed: a. connect rf in and out b. connect the voltages and ground pins as shown in the circuit. c. apply the rf signal d. power down with the reverse sequence narrowband s-parameters +25 c, icq=850ma 28 29 30 31 32 33 2110 2130 2150 2170 frequency (mhz) s21 (db) -20 -15 -10 -5 0 5 s11, s22 (db) s21 s11 s22 wideband s-parameters +25 c, icq=850ma -40 -20 0 20 40 0 500 1000 1500 2000 2500 3000 frequency (mhz) magnitude (db) s21 s11 s22 gain / output power vs. input power 2140 mhz, +25 c, icq = 850ma 28 30 32 34 36 38 -6-4-20246 input power (dbm) pout (dbm) 30 30.5 31 31.5 32 32.5 gain (db) pout gain aclr vs. channel power 3gpp w-cdma, 1fa, test model 1+32 dpch, 5 mhz offset 2140 mhz, icq=850ma -60 -55 -50 -45 -40 18 20 22 24 26 28 output channel power (dbm) aclr (dbc) -40 c +25 c +85 c imd3, imd5, oip3 vs. ouptut power 2140 mhz, +25 c, icq = 850ma -80 -70 -60 -50 -40 20 22 24 26 28 30 32 output power per tone (dbm) imd (dbc) 20 30 40 50 60 oip3 (dbm) imd3l imd3u imd5 oip3 pae / icc vs. output power 2140 mhz, +25 c, icq = 850ma 750 800 850 900 950 1000 22 24 26 28 30 32 34 output power (dbm) icc (ma) 0 5 10 15 20 25 pae (%) icc pae dnp dnp dnp dnp dnp dnp dnp dnp dnp 0 ? 0 ? 0 ? 0 ? 10 f .01
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 3 of 5 july 2008 AP502 umts-band 4w hbt amplifier module product information performance graphs ? class b configuration the AP502 can be adjusted to operate at lower current biasing levels by modifying the r7 resistor for improved efficiency performance. the configuration shown on this page has the AP502 operating with icq = 250 ma (icc = 400 ma @ 27 dbm). output l-c matching components have been added externally on the circuit to optimize the amplifier for acpr performance at this biasing configuration. notes: 1. please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. the use of a convection fan is also recommended in laboratory environments. details of the mounting holes used in the wj heatsink are given on the last page of this datasheet. 2. the area around the module underneath the pcb should not contain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the laboratory, the power-on sequencing should be followed: a. connect rf in and out b. connect the voltages and ground pins as shown in the circuit. c. apply the rf signal d. power down with the reverse sequence narrowband s-parameters +25 c, icq=275ma 26 27 28 29 30 31 2110 2130 2150 2170 frequency (mhz) s21 (db) -20 -15 -10 -5 0 5 s11, s22 (db) s21 s11 s22 wideband s-parameters +25 c, icq=275ma -40 -20 0 20 40 0 500 1000 1500 2000 2500 3000 frequency (mhz) magnitude (db) s21 s11 s22 gain / output power vs. input power 2140 mhz, +25 c, icq=275ma 28 30 32 34 36 38 -20246810 input power (dbm) pout (dbm) 25 26 27 28 29 30 gain (db) pout gain aclr vs. channel power +25 c, 3gpp w-cdma, test model 1+32 dpch, 1960 mhz, icq=250ma -70 -60 -50 -40 20 21 22 23 24 25 26 27 28 output channel power (dbm) aclr (dbc) 5 mhz 10 mhz imd3, imd5, oip3 vs. ouptut power 2140 mhz, +25 c, icq=275ma -60 -50 -40 -30 -20 20 22 24 26 28 30 32 output power per tone (dbm) imd (dbc) 20 30 40 50 60 oip3 (dbm) imd3l imd3u imd5 oip3 pae / icc vs. output power 2140 mhz, +25 c, icq=275ma 300 400 500 600 700 800 22 24 26 28 30 32 34 output power (dbm) icc (ma) 0 5 10 15 20 25 pae (%) icc pae dnp dnp dnp dnp dnp dnp dnp dnp 0 ? 730 ? 0 ? 10 f .01
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 4 of 5 july 2008 AP502 umts-band 4w hbt amplifier module product information mttf calculation the mttf of the AP502 can be calculated by first determining how much power is being dissipated by the amplifier module. because the device?s intended application is to be a power amplifier pre- driver or final stage output amplifier, the output rf power of the amplifier will help lower the overall power dissipation. in addition, the amplifier can be biased with different quiescent currents, so the calculation of the mttf is custom to each application. the power dissipation of the device can be calculated with the following equation: p diss = v cc * i cc ? (output rf power ? input rf power), v cc = operating supply voltage = 12v i cc = operating current {the rf power is converted to watts} while the maximum recommended case temperature on the datasheet is listed at 85 ? c, it is suggested that customers maintain an mttf above 1 million hours. this would convert to a derating curve for maximum case temperature vs. power dissipation as shown in the plot below. maximum recommended case temp erature vs. power dissipation to maintain 1 million hours mttf 50 60 70 80 90 456789101112 power dissipation (watts) maximum case temperature (c) to calculate the mttf for the module, the junction temperature needs to be determined. this can be easily calculated with the module?s power dissipation, the thermal resistance value, and the case temperature of operation: t j = p diss * r th + t case t j = junction temperature p diss = power dissipation (calculated from above) r th = thermal resistance = 9 ? c/w t case = case temperature of module?s heat sink from a numerical standpoint, the mttf can be calculated using the arrhenius equation: mttf = a* e (ea/k/tj) a = pre-exponential factor = 6.087 x 10 -11 hours ea = activation energy = 1.39 ev k = boltzmann?s constant = 8.617 x 10 -5 ev/ ok t j = junction temperature (ok) = t j (oc) + 273 a graphical view of the mttf can be shown in the plot below. mttf vs. junction temperature 1.e+05 1.e+06 1.e+07 130 140 150 160 170 180 junction temperature (c) mttf (hours)
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 5 of 5 july 2008 AP502 umts-band 4w hbt amplifier module product information outline drawing 23 4 5 6 1 AP502 outline drawing for the heatsink shipped with the wj evaluation board product marking the device will be marked with an ?AP502? designato r with an alphanumeric lot code on the top surface of the p ackage noted as ?abcd? on the drawing. a manufacturing date will also be printed as ?xxyy?, where the ?xx? represents the week number from 1 ? 52. the product will be shipped in tubes in multiples of 15. esd / msl information esd rating: class 1c value: passes at 1,000 to < 2,000 volts test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iii value: passes 500 to < 1,000 volts test: charged device model (cdm) standard: jedec standard jesd22-c101
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